P2H80F2 Datasheet, PDF (1/3 Pages) Nihon Inter Electronics Corporation – FRD MODULE 80A/200V

FRD MODULE 80A/200V
FEATURES
* Compatible with Isolated Base SOT227
* Dual Separated Diodes
* Ultra – Fast Recovery
* Low Forward Voltage Drop
* High Surge Capability
TYPICAL APPLICATIONS
* High Frequency Rectification
P2H80F2
OUTLINE DRAWING
See the Next Page
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage *1
Non Repetitive Peak Reverse Voltage *1
Symbol
VRRM
VRSM
Approx Net Weight:35g
Type / Grade
P2H80F2
-
200
-
-
-
Unit
V
Parameter
Average Rectified Output Current *1
RMS Forward Current *1
Surge Forward Current *1
I Squared t *1
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Mounting torque
Case mounting
Terminals
IO(AV)
IF(RMS)
IFSM
I²t
Tjw
Tstg
Viso
Ftor
Conditions
Max Rated
Value
50Hz Half Sine Wave condition
Tc=96°C
80
125
50 Hz Half Sine Wave,1Pulse
Non-repetitive
800
2msec to 10msec
3200
-40 to +150
-40 to +125
Base Plate to Terminals, AC1min
2500
M4Screw
1.5(1.4)
M4Screw
1.5(1.4)
Unit
A
A
A
A²s
°C
°C
V
N•m
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current *1
Peak Forward Voltage *1
Reverse Recovery Time
Thermal Resistance *1
*1: Value Per 1Arm
Symbol
Test Conditions
IRM VRM= VRRM, Tj= 25°C
VFM IFM= 80A, Tj=25°C
trr Tj=25°C , IFM=10A, -di/dt=50A/µs
Rth(j-c) Junction to Case
Rth(c-f)
Base Plate
Compound
to
Heat
Sink
with
Thermal
Max.
75
1.05
50
0.51
0.3
Unit
µA
V
ns
°C/W