P2H30QH10 Datasheet, PDF (1/3 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

SBD MODULE 30A/100V
FEATURES
* Compatible with Isolated Base SOT227
* Dual Separated Diodes
* Extremely Low Forward Voltage Drop
* Low Power Loss, High Efficiency
* High Surge Capability
TYPICAL APPLICATIONS
* High Frequency Rectification
P2H30QH10
OUTLINE DRAWING
See the Next Page
Maximum Ratings
Parameter
Symbol
Repetitive Peak Reverse Voltage *1
Non Repetitive Peak Reverse Voltage *1
VRRM
VRSM
Approx Net Weight:35g
Type / Grade
P2H30QH10
-
100
-
-
-
Unit
V
Parameter
Average Rectified Output Current *1
Surge Forward Current *1
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Terminals
Mounting torque _{Case mounting}
IO(AV)
IFSM
Tjw
Tstg
Viso
Ftor
Conditions
Max Rated
Value
Unit
50Hz Half Sine Wave condition
Tc=96°C
30
A
50 Hz Half Sine Wave,1Pulse
Non-repetitive
150
A
-40 to +150 °C
-40 to +125 °C
Base Plate to Terminals, AC1min
2500
V
M4Screw
1.5(1.4)
M4Screw
with Thermal Compound
1.5(1.4)
N•m
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current *1
Peak Forward Voltage *1
Thermal Resistance *1
*1: Value Per 1Arm
Symbol
Test Conditions
IRM VRM= VRRM, Tj= 25°C
VFM IFM= 30A, Tj=25°C
Rth(j-c) Junction to Case
Rth(c-f)
Base Plate
Compound
to
Heat
Sink
with
Thermal
Max.
20
1.0
1.6
0.3
Unit
µA
V
°C/W