NSH03A10 Datasheet, PDF (1/2 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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S B D T y p e : NSH03A10
FEATURES
* FLAT-PAK Surface Mounting Device
* Low Forward Voltage Drop
* Low Power Loss,High Efficiency
* High Surge Capability
* Packaged in 16mm Tape and Reel
* Not Rolling During Assembly
OUTLINE DRAWING
Maximum Ratings
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Approx Net Weight:0.16g
Rating
Symbol
NSH03A10
Unit
Repetitive Peak Reverse Voltage
VRRM
100
V
Average Rectified Output Current
Io
1.5 Ta=25°C *1
3.0 Tl=112°C
50Hz Half Sine
Wave Resistive Load
A
RMS Forward Current
IF(RMS)
4.71
A
Surge Forward Current
IFSM
60
50Hz Half Sine Wave,1cycle
Non-repetitive
A
Operating JunctionTemperature Range Tjw
-40 to +150
°C
Storage Temperature Range
Tstg
-40 to +150
°C
Electrical • Thermal Characteristics
Characteristics
Symbol
Conditions
Min. Typ. Max.
Peak Reverse Current
IRM Tj= 25°C, VRM= VRRM
-
Peak Forward Voltage
VFM Tj= 25°C, IFM= 3.0A
-
Thermal Junction to Ambient Rth(j-a) Alumina Substrate Mounted *1 -
Resistance Junction to Lead
Rth(j-l)
-
-
*1 Alumina Substrate Mounted (Soldering Lands=2x3.5mm,Both Sides)
(Tl: Lead Temperature)
-
1
- 0.85
- 89
- 13
Unit
mA
V
°C /W
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