NSH03A09 Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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S B D T y p e : NSH03A09
FEATURES
* FLAT-PAK Surface Mounting Device
* Low Forward Voltage Drop
* Low Power Loss,High Efficiency
* High Surge Capability
* Packaged in 16mm Tape and Reel
* Not Rolling During Assembly
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:0.16g
Rating
Repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
VRRM
Io
IF(RMS)
IFSM
Tjw
Tstg
NSH03A09
90
1.57 Ta=25°C *1
3.0 Tl=113°C
50Hz Half Sine
Wave Resistive Load
4.71
60
50Hz Half Sine Wave,1cycle
Non-repetitive
-40 to +150
-40 to +150
Unit
V
A
A
A
°C
°C
Electrical • Thermal Characteristics
Characteristics
Symbol
Conditions
Min. Typ. Max.
Peak Reverse Current
IRM Tj= 25°C, VRM= VRRM
-
Peak Forward Voltage
VFM Tj= 25°C, IFM= 3.0A
-
Thermal Junction to Ambient Rth(j-a) Alumina Substrate Mounted *1 -
Resistance Junction to Lead
Rth(j-l)
-
-
*1 Alumina Substrate Mounted (Soldering Lands=2x3.5mm,Both Sides)
(Tl: Lead Temperature)
-
1
- 0.85
- 89
- 13
Unit
mA
V
°C /W
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