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NB10HSA08 Datasheet, PDF (1/2 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode | |||
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10A Avg. 80Volts
NBï¼ï¼ï¼¨ï¼³ï¼¡ï¼ï¼
Schottky Barrier Diode
DSE-13051ï¼1/2ï¼
æ§é ï¼ã·ã§ãããã¼ããªã¢ãã¤ãªã¼ãï¼SBDï¼
Construction : Schottky Barrier Diode
ç¨éï¼é«å¨æ³¢æ´æµç¨
Application : High-Frequency Rectification
ç¹é·
å°å SMD
ä½ç±æµæ
é«é»æµ
Tj=150â
Feature
Small SMD
Lower Thermal-Resistance
High Current Capability
Tj=150â
å¤å½¢å¯¸æ³å³ OUTLINE DRAWING
Package : NB
Dimension : mm
â Weight
: 0.06gï¼typ.ï¼
â Flammability : Epoxy Resin=UL94V-0 Recognized
â 絶対æ大å®æ ¼ï¼è¡¨ç¤ºç¡ãå ´å Ta=25âï¼ Absolute Maximum Ratings (Ta = 25 oC unless otherwise stated)
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ç®
Item
è¨å·
Symbol
æ¡ä»¶
Conditions
å®æ ¼å¤
Rating
ããè¿ããã¼ã¯éé»å§
Repetitive Peak Reverse Voltage
VRRM
ï¼
80
å¹³åæ´æµé»æµ
Average Rectified Output Current
50Hz æ£å¼¦å
¨æ³¢éé»
Tl=91âï¼VRM=40V
10
IO
æµæè² è· *1
50H Full Sine Waveï¼
(Tl:Lead Temperature)
Ta=29â *2
Resistive Load
VRM=40V
3.0
å®å¹é é»æµ
RMS Forward Current
IF(RMS)
ï¼
11.1
ãµã¼ã¸é é»æµ
Surge Forward Current
50Hz æ£å¼¦å
¨æ³¢ 1 ãµã¤ã¯ã« éç¹°ãè¿ã
IFSM
50Hz Full Sine Waveï¼1 cycleï¼Non-repetitive
120
åä½æ¥å温度ç¯å²
Operation Junction Temperature Range
Tjw
ï¼
-40ï½+150
ä¿å温度ç¯å²
Storage Temperature Range
Tstg
ï¼
-40ï½+150
åä½
Units
V
A
A
A
â
â
â é»æ°çã»ç±çç¹æ§ Electrical / Thermal Characteristics
é
ç®
è¨å·
æ¡ä»¶
æå°å¤
Item
Symbol
Conditions
min.
ãã¼ã¯éé»æµ
Peak Reverse Current
IRM
VRM=VRRMï¼Tj=25âï¼ Per diode
-
ãã¼ã¯é é»å§
Peak Forward Voltage
VFM
IFM=5.0Aï¼Tj=25âï¼Per diode
-
æ¥å容é
Junction Capacitance
Cj
f=100kHzï¼VR=10Vï¼Per diode
ç±æµæ
Thermal Resistance
Rth(j-l) æ¥åé¨ã»ãªã¼ãé
-
Junction to Lead
Rth(j-a)
æ¥åé¨ã»å¨å²é
*2(カï¾ï¾ï½´ï¾ï¾åºæ¿å®è£
)
-
Junction to Ambient
*1 : カソーï¾ï¾ï½ºï¾ï¾åä½ã«ããï¼Common Cathode Operation
*2 : ï¾ï¾ï¾ï¾ï¾åºæ¿å®è£
ï¼Glass-Epoxy Substrate Mounted (Soldering Land=2.0*1.5mm,2.0*3.5mm,Both Sides)
代表å¤
typ.
-
-
135
-
-
æ大å¤
max.
100
0.7
-
7
60
åä½
Units
µA
V
pF
â/W
â/W
â æ¬è³æã®è¨è¼å
容ã¯è£½åæ¹è¯ãªã©ã®ããäºåãªãå¤æ´ãããã¨ãããã¾ãã
â The content specified herein is subject to change without notice.
Date of issue:2013.9.25
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