GSQ10A06 Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

ç
S B D T y p e : GSQ10A06
FEATURES
*Similar to TO-220AC Case
*Low Forward Voltage Drop
*Low Power Loss,High Efficiency
*High Surge Capability
*Tj=150 °C operation
OULINE DRAWING
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Mounting torque
Symbol
VRRM
VRSM
IO
IF(RMS)
IFSM
Tjw
Tstg
Ftor
Approx Net Weight: 1.85g ^ç
GSQ10A06
60
65
10
Tc=111°C
50 Hz half Sine Wave
Resistive Load
15.7
150
50Hz Half Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
recommended torque = 0.5
Unit
V
V
A
A
A
°C
°C
N•m
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
IRM
VFM
Rth(j-c)
Conditions
Tj= 25°C, VRM= VRRM
Tj= 25°C, IFM= 10 A
Junction to Case
Min.
-
-
-
Typ.
-
-
-
Max.
10
0.67
3
Unit
mA
V
°C /W
ç