GSH10A10B Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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S B D T y p e : GSH10A10B
FEATURES
*Similar to TO-220AB Case
*Low Forward Voltage Drop
*Low Power Loss,High Efficiency
*High Surge Capability
*Tj=150 °C operation
OULINE DRAWING
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Mounting torque
Symbol
VRRM
IO
IF(RMS)
IFSM
Tjw
Tstg
Ftor
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Approx Net Weight: 1.9g
GSH10A10B
100
10
Tc=120°C
50 Hz half Sine Wave
Resistive Load
15.7
180
50Hz Half Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
recommended torque = 0.5
Unit
V
A
A
A
°C
°C
N•m
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
IRM
VFM
Rth(j-c)
Conditions
Tj= 25°C, VRM= VRRM
Tj= 25°C, IFM= 10 A
Junction to Case
Min.
-
-
-
Typ.
-
-
-
Max.
1
0.88
3
Unit
mA
V
°C /W
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