GCQ10A06 Datasheet, PDF (1/2 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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S B D T y p e : GCQ10A06
FEATURES
*Similar to TO-220AB Case
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150 °C operation
OUTLINE DRAWING
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Mounting torque
Symbol
VRRM
VRSM
IO
IF(RMS)
IFSM
Tjw
Tstg
Ftor
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Approx Net Weight: 1.9g
GCQ10A06
Unit
60
V
65
V
10
Tc=108°C
50 Hz Full Sine Wave
Resistive Load
A
11.1
A
110
50Hz Full Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
recommended torque = 0.5
A
°C
°C
N•m
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
IRM
Tj= 25°C, VRM= VRRM
per arm
VFM
Tj= 25°C, IFM= 5 A
per arm
Rth(j-c) Junction to Case
Min. Typ. Max. Unit
-
-
5 mA
-
- 0.58 V
-
-
3 °C /W
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