FSU10B60 Datasheet, PDF (1/5 Pages) Nihon Inter Electronics Corporation – FOR POWER FACTOR IMPROVEMENT HIGH FREQUENCY RECTIFICATION

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FRD Type : FSU10B60
For Power Factor Improvement High Frequency Rectification
FEATURES
* Fully Molded Isolation Case
* Ultra – Fast Recovery
* Low Forward Voltage Drop
* Low Power Loss, High Efficiency
* High Surge Capability
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:1.7g
Rating
Repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Mounting torque
Symbol
VRRM
IO
IF(RMS)
IFSM
Tjw
Tstg
FSU10B60
600
10
Tc=60°C
50 Hz Half Sine Wave
Resistive Load
15.7
100
50 Hz Half Sine Wave,1cycle
Non-repetitive
- 40 to + 150
- 40 to + 150
0.5 Recommended value
Unit
V
A
A
A
°C
°C
N•m
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Reverse Recovery Time
Thermal Resistance
Symbol
Conditions
IRM Tj= 25°C, VRM= VRRM
VFM Tj= 25°C, IFM= 10A
trr
IFM= 10A,
-di/dt= 50 A/µs, Ta= 25°C
Rth(j-c) Junction to Case
Rth(c-f) Case to Fin
Min.
-
-
Typ.
-
2.3
Max.
30
2.7
Unit
µA
V
-
25 40 ns
-
-
-
-
4
1.5
°C/W
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