FSH10A20B Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

ç
10A 200V
SBD Type : FSH10A20B
For High Frequency Rectificationç
FEATURES
* High VRM SBD
* Low Forward Voltage Drop and Low Noise
* Fully Molded Isolation
OUTLINE DRAWING
ç
Maximum Ratings
Approx Net Weight:1.75g
Rating
Repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Mounting torque
Symbol
VRRM
IO
IF(RMS)
IFSM
Tjw
Tstg
FSH10A20B
200
10
Tc=108°C
50 Hz,Half Sine
Resistive Load
Wave
15.7
120
50 Hz Half Sine Wave,1cycle
Non-repetitive
- 40 to + 150
- 40 to + 150
0.5 Recommended value
Unit
V
A
A
A
°C
°C
N•m
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
IRM Tj=25°C,VRM=VRRM
VFM Tj=25°C, IFM=10A
Rth(j-c) Junction to Case
Rth(c-f) Case to Fin
Min.
-
-
-
-
Typ.
-
-
-
-
Max. Unit
200 µA
0.90 V
3
1.5
°C/W
ç