FCQ20C03 Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

ç
S B D T y p e : FCQ20C03
FEATURES
*Similar to TO-220AB Case
*Fully Molded Isolation
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*Low Power Loss,High Efficiency
*High Surge Capability
*Tj=150 °C operation
OUTLINE DRAWING
ç
Maximum Ratings
Approx Net Weight: 1.75g
Rating
Repetitive Peak Reverse Voltage
Repetitive Peak Surge Reverse Voltage
Symbol
VRRM
VRRSM
Average Rectified Output Current
IO
RMS Forward Current
IF(RMS)
Surge Forward Current
IFSM
Operating JunctionTemperature Range
Tjw
Storage Temperature Range
Tstg
Mounting torque
Ftor
Electrical • Thermal Characteristics
FCQ20C03
30
35(pulse width ≤ 1µs duty ≤ 1/50)
20
Tc=104°C
50 Hz Full Sine Wave
Resistive Load
22.2
180
50Hz Full Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
recommended torque = 0.5
Unit
V
V
A
A
A
°C
°C
N•m
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
IRM
Tj= 25°C, VRM= VRRM
per Arm
VFM
Tj= 25°C, IFM= 10 A
per Arm
Rth(j-c) Junction to Case
Rth(c-f) Cace to Fin
Min. Typ. Max. Unit
-
-
10 mA
-
- 0.51 V
-
- 2.3 °C /W
-
- 1.5 °C /W
ç