FCH30B10 Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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S B D T y p e : FCH30B10
30A 100V Tj:150°C
FEATURES
*TO-220AB Case
*Fully Molded
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150 °C operation
OUTLINE DRAWING
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Maximum Ratings
Approx Net Weight: 1.75g
Rating
Repetitive Peak Reverse Voltage
Symbol
VRRM
Average Rectified Output Current
IO
RMS Forward Current
IF(RMS)
Surge Forward Current
IFSM
Operating JunctionTemperature Range
Tjw
Storage Temperature Range
Tstg
Mounting torque
Ftor
Electrical • Thermal Characteristics
FCH30B10
100
30
Tc=97°C
50 Hz Full Sine Wave
Resistive Load
33.3
150
50Hz Full Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
recommended torque = 0.5
Unit
V
A
A
A
°C
°C
N•m
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
IRM
Tj= 25°C, VRM= VRRM
per Arm
VFM
Tj= 25°C, IFM= 15 A
per Arm
Rth(j-c) Junction to Case
Rth(c-f) Cace to Fin
Min. Typ. Max. Unit
-
-
1 mA
-
- 0.96 V
-
- 1.5 °C /W
-
- 1.5 °C /W