FCH20B10 Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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S B D T y p e : FCH20B10
OUTLINE DRAWING
FEATURES
*TO-220AB Case
*Fully Molded
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150 °C operation
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Maximum Ratings
Approx Net Weight: 1.75g
Rating
Repetitive Peak Reverse Voltage
Symbol
VRRM
Average Rectified Output Current
IO
RMS Forward Current
IF(RMS)
Surge Forward Current
IFSM
Operating JunctionTemperature Range
Tjw
Storage Temperature Range
Tstg
Mounting torque
Ftor
Electrical • Thermal Characteristics
FCH20B10
Unit
100
V
20
Tc=105°C
50 Hz Full Sine Wave
Resistive Load
A
22.2
A
180
50Hz Full Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
recommended torque = 0.5
A
°C
°C
N•m
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
IRM
Tj= 25°C, VRM= VRRM
per Arm
VFM
Tj= 25°C, IFM= 10 A
per Arm
Rth(j-c) Junction to Case
Rth(c-f) Cace to Fin
Min. Typ. Max. Unit
-
-
1 mA
-
- 0.91 V
-
- 2.3 °C /W
-
- 1.5 °C /W
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