FCH08A10 Datasheet, PDF (1/2 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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S B D T y p e : FCH08A10
OUTLINE DRAWING
FEATURES
*Similar to TO-220AB Case
*Fully Molded Isolation
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*Low Power Loss,High Efficiency
*High Surge Capability
*Tj=150 °C operation
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Mounting torque
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Symbol
VRRM
IO
IF(RMS)
IFSM
Tjw
Tstg
Ftor
Approx Net Weight: 1.75g
FCH08A10
Unit
100
V
8
Tc=127°C
50 Hz Full Sine Wave
Resistive Load
A
8.89
A
100
50Hz Full Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
recommended torque = 0.5
A
°C
°C
N•m
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
IRM
Tj= 25°C, VRM= VRRM
per arm
VFM
Tj= 25°C, IFM= 4 A
per arm
Rth(j-c) Junction to Case
Rth(c-f) Cace to Fin
Min. Typ. Max. Unit
-
-
1 mA
-
- 0.88 V
-
-
3 °C /W
-
- 1.5 °C /W
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