FCH08A03L Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

ç
S B D T y p e : FCH08A03L
OUTLINE DRAWING
FEATURES
*Similar to TO-220AB Case
*Fully Molded Isolation
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*Low Power Loss,High Efficiency
*High Surge Capability
*Tj=150 °C operation
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Repetitive Peak Surge Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Mounting torque
ç
Symbol
VRRM
VRRSM
IO
IF(RMS)
IFSM
Tjw
Tstg
Ftor
Approx Net Weight: 1.75g
FCH08A03L
30
35(pulse width ≤ 1µs duty ≤ 1/50)
8
Tc=133°C
50 Hz Full Sine Wave
Resistive Load
8.89
100
50Hz Full Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
recommended torque = 0.5
Unit
V
V
A
A
A
°C
°C
N•m
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
IRM
Tj= 25°C, VRM= VRRM
per arm
VFM
Tj= 25°C, IFM= 4 A
per arm
Rth(j-c) Junction to Case
Rth(c-f) Cace to Fin
Min. Typ. Max. Unit
-
-
1 mA
-
- 0.56 V
-
-
3 °C /W
-
- 1.5 °C /W
ç