ESL03B03-F Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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SBD Type : ESL03B03-F
FEATURES
* TO-252AA Case, Surface Mounting Device
* Extremely Low Forward Voltage drop
* Low Power Loss
* High Surge Capability
* Packaged in 16mm Tape and Reel
OUTLINE DRAWING
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Maximum Ratings
Approx Net Weight:0.30g
Rating
Symbol
ESL03B03-F
Repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
VRRM
IO
IF(RMS)
IFSM
Tjw
Tstg
30
3.0 Tc=82°C
50Hz Half Sine Wave
Resistive Load
4.71
45
50Hz Half Sine Wave,1cycle,
Non-repetitive
- 40 to + 100
- 40 to + 125
Unit
V
A
A
A
°C
°C
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance Junction to Case
Symbol
Conditions
IRM Tj=25°C,VRM=VRRM
VFM Tj=25°C,IFM= 3 A
Rth(j-c)
-
Min Typ Max
- - 3.0
- - 0.47
-- 6
Unit
mA
V
°C/W
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