ESH05A15 Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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S B D T y p e : ESH05A15
FEATURES
*TO-251AA Case
*High Voltage Low leakage Current
*Low Forward Voltage Drop
*Low Power Loss,High Efficiency
*High Surge Capability
*Tj=150 °C operation
OULINE DRAWING
Maximum Ratings
Approx Net Weight: 0.35g
Rating
Repetitive Peak Reverse Voltage
Symbol
VRRM
Average Rectified Output Current *1
IO
RMS Forward Current *1
IF(RMS)
Surge Forward Current *1
IFSM
Operating JunctionTemperature Range
Tjw
Storage Temperature Range
Tstg
Electrical • Thermal Characteristics
ESH05A15
Unit
150
V
1.6 Ta=29°C *2 50 Hz half Sine Wave
5.0 Tc=125°C ^{Resistive Load}
A
7.85
A
130
50Hz Half Sine Wave ,1cycle
Non-repetitive
A
-40 to +150
°C
-40 to +150
°C
Characteristics
Symbol
Peak Reverse Current
IRM
Peak Forward Voltage
VFM
Thermal Resistance
Junction to Ambient
Junction to Case
Rth(j-a)
Rth(j-c)
*1: Anode Terminals 1 and 3 Connected
*2: P.C. Board mounted, Print Land=20x20mm
Conditions
Tj= 25°C, VRM= VRRM
Tj= 25°C, IFM= 5 A
P.C.Board Mounted *2
-
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1
0.88
80
5
Unit
mA
V
°C /W
°C /W
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