ECQ10A04-F Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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10A 40V Cathode Common
SBD Type : ECQ10A04-F
OUTLINE DRAWING
For High Frequency Rectification
FEATURES
* High VRM SBD
* Low Forward Voltage Drop and Low Noise
* Fully Molded Isolation
* Dual Diodes Cathode Common
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Maximum Ratings
Approx Net Weight:0.30g
Rating
Repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
VRRM
IO
IF(RMS)
IFSM
Tjw
Tstg
ECQ10A04-F
40
10
Tc=105°C
50 Hz,Full Sine
Resistive Load
Wave
50 Hz,Full Sine Wave
2.0 Ta=28°C Resistive Load
P.C.Board mounted *
11.1
100
50 Hz Full Sine Wave,1cycle
Non-repetitive
- 40 to + 150
- 40 to + 150
Unit
V
A
A
A
°C
°C
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
*: Print Land 20x20
Symbol
Conditions
IRM Tj=25°C,VRM=VRRM per Diode
VFM Tj=25°C, IFM=5A per Diode
Rth(j-c) Junction to Case
Rth(j-a)
Junction to Ambent
With P.C.Board mounted
*
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
3
0.55
4
80
Unit
mA
V
°C/W
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