EC31QS10 Datasheet, PDF (1/2 Pages) Nihon Inter Electronics Corporation – Low Forward Voltage drop Diode

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S B D T y p e : EC31QS10
FEATURES
* Miniature Size,Surface Mount Device
* Low Forward Voltage Drop
* Low Power Loss,High Efficiency
* High Surge Capability
* 30 Volts through 100Volts Types Available
* Packaged in 12mm Tape and Reel
* Not Rolling During Assembly
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:0.06g
Rating
Repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
EC31QS10
VRRM
IO
IF(RMS)
IFSM
Tjw
Tstg
100
1.3
3.0
Ta=26 °C *1
Tl=84 °C
Tl:Lead Temperature
50Hz Half Sine
Wave Resistive Load
4.71
60
50Hz Half Sine Wave,1cycle
Non-repetitive
-40 to +150
-40 to +150
Unit
V
A
A
A
°C
°C
Electrical • Thermal Characteristics
Characteristics
Symbol
Conditions
Peak Reverse Current
Peak Forward Voltage
Thermal Junction to Ambient
Resistance Junction to Lead
IRM
VFM
Rth(j-a)
Rth(j-l)
Tj= 25°C, VRM= VRRM
Tj= 25°C, IFM= 3.0A
*1
-
*1 Alumina Substrate Mounted
Soldering Lands=2x2mm,Both Sides
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
2
0.85
108
23
Unit
mA
V
°C /W
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