EC30LA02 Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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S B D T y p e : EC30LA02
FEATURES
* Miniature Size,Surface Mount Device
* Extremely Low Forward Voltage Drop
* Low Power Loss,High Efficiency
* High Surge Capability
* Packaged in 12mm Tape and Reel
* Not Rolling During Assembly
OUTLINE DRAWING
Maximum Ratings
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Approx Net Weight:0.06g
Rating
Repetitive Peak Reverse Voltage
Repetitive Peak Surge Reverse Voltage
Symbol
VRRM
VRRSM
Average Rectified Output Current
Io
RMS Forward Current
IF(RMS)
Surge Forward Current
IFSM
Operating JunctionTemperature Range
Tjw
Storage Temperature Range
Tstg
Electrical • Thermal Characteristics
EC30LA02
20
25(pulse width ≤ 1µs duty ≤ 1/50)
2.1 Ta=25°C *1
50Hz Half Sine
3.0
Tl=85°C Tl=Lead ^{Wave Resistive}
Temperature
Load
4.71
50
50Hz Half Sine Wave,1cycle
Non-repetitive
-40 to +125
-40 to +125
Unit
V
V
A
A
A
°C
°C
Characteristics
Symbol
Conditions
Min. Typ. Max.
Unit
Peak Reverse Current
IRM Tj= 25°C, VRM= VRRM
--
3
Peak Forward Voltage
VFM Tj= 25°C, IFM= 3.0A
- - 0.39
Thermal Junction to Ambient Rth(j-a) Alumina Substrate mounted *1 - - 108
Resistance Junction to Lead
Rth(j-l)
-
- - 23
mA
V
°C /W
*1: Alumina Substrate mounted (Soldering Lands=2x2mm,Both Sides)
The curves of Average Forward Current vs. Temperature are the value that do not consider Reverse Power
Dissipation.
In actual use, consider the Reverse Power Dissipation to avoid thermal runaway of the diode.
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