EC21QS10 Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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S B D T y p e : EC21QS10
FEATURES
* Miniature Size,Surface Mount Device
* Low Forward Voltage Drop
* Low Power Loss,High Efficiency
* High Surge Capability
* 30 Volts through 100Volts Types Available
* Packaged in 12mm Tape and Reel
* Not Rolling During Assembly
OUTLINE DRAWING
Maximum Ratings
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Approx Net Weight:0.06g
Rating
Symbol
EC21QS10
Unit
Repetitive Peak Reverse Voltage
VRRM
100
V
Average Rectified Output Current
Io
1.3 Ta=25 °C *1
2.0 Tl=106 °C
50Hz Half Sine
Wave Resistive Load
A
RMS Forward Current
IF(RMS)
3.14
A
Surge Forward Current
IFSM
50
50Hz Half Sine Wave,1cycle
Non-repetitive
A
Operating JunctionTemperature Range Tjw
-40 to +150
°C
Storage Temperature Range
Tstg
-40 to +150
°C
Electrical • Thermal Characteristics
Characteristics
Symbol
Conditions
Peak Reverse Current
Peak Forward Voltage
Thermal Junction to Ambient
Resistance Junction to Lead
IRM
VFM
Rth(j-a)
Rth(j-l)
Tj= 25°C, VRM= VRRM
Tj= 25°C, IFM= 2.0A
Alumina Substrate Mounted *1
-
*1 Alumina Substrate Mounted (Soldering Lands=2x2mm,Both Sides)
(Tl: Lead Temperature)
Min. Typ. Max.
--
1
- - 0.85
- - 108
- - 23
Unit
mA
V
°C /W
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