EC10QS03L Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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SBD Type : EC10QS03L
FEATURES
* Miniature Size,Surface Mount Device
* Extremely Low Forward Voltage Drop
* Low Power Loss,High Efficiency
* High Surge Capability
* 30 Volts through 100Volts Types Available
* Packaged in 12mm Tape and Reel
* Not Rolling During Assembly
OUTLINE DRAWING
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Maximum Ratings
Approx Net Weight:0.06g
Rating
Symbol
EC10QS03L
Unit
Repetitive Peak Reverse Voltage
VRRM
30
V
Average Rectified Output Current
IO
1.0 Ta=28 °C *1
1.0 Ta=58 °C *2
50Hz Half Sine
Wave Resistive Load
A
RMS Forward Current
IF(RMS)
1.57
A
Surge Forward Current
IFSM
20
50Hz Half Sine Wave,1cycle
Non-repetitive
A
Operating JunctionTemperature Range Tjw
-40 to +150
°C
Storage Temperature Range
Tstg
-40 to +150
°C
Electrical • Thermal Characteristics
Characteristics
Symbol
Conditions
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
IRM Tj= 25°C, VRM= VRRM
VFM Tj= 25°C, IFM= 1.0A
Rth(j-a) Junction to Ambient
*1
*2
*1 Glass Epoxy Substrate Mounted
*2 Alumina Substrate Mounted
Soldering Lands=2x2mm,Both Sides
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.0
0.45
157
108
Unit
mA
V
°C /W
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