EC10DS4 Datasheet, PDF (1/5 Pages) Nihon Inter Electronics Corporation – Low Forward Voltage Drop Diode

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DIODE Type : EC10DS4
FEATURES
* Miniature Size,Surface Mount Device
* High Surge Capability
* Low Forward Voltage Drop
* Low Reverse Leakage Current
* Packaged in 12mm Tape and Reel
* Not Rolling During Assembly
OUTLINE DRAWING
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Maximum Ratings
Approx Net Weight:0.06g
Rating
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
VRRM
VRSM
IO
IF(RMS)
IFSM
Tjw
Tstg
EC10DS4
400
600
0.74 Ta=25 °C *1
1.0 Ta=25 °C *2
50Hz Half Sine
Wave Resistive Load
1.57
25
50Hz Half Sine Wave,1cycle
Non-repetitive
-40 to +150
-40 to +150
Unit
V
V
A
A
A
°C
°C
Electrical • Thermal Characteristics
Characteristics
Symbol
Conditions
Min.
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
IRM Tj= 25°C, VRM= VRRM
-
VFM Tj= 25°C, IFM= 1.0A
-
Rth(j-a) Junction to Ambient
*1
-
*2
-
*1 Glass Epoxy Substrate Mounted (Soldering Lands=2x2mm,Both Sides)
*2 Alumina Substrate Mounted (Soldering Lands=2x2mm,Both Sides)
Typ.
-
-
-
-
Max.
10
1.1
157
108
Unit
µA
V
°C /W
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