EA30QS03L Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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SBD Type : EA30QS03L
FEATURES
* TO-251AA Case
* Extremely Low Forward Voltage drop
* Low Power Loss, High Ecciciency
* High Surge Capability
OUTLINE DRAWING
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Maximum Ratings
Approx Net Weight:0.35g
Rating
Symbol
EA30QS03L
Repetitive Peak Reverse Voltage
Average Rectified
Output Current
RMS Forward Current
VRRM
IO
IF(RMS)
Surge Forward Current
IFSM
Operating JunctionTemperature Range Tjw
Storage Temperature Range
Tstg
Electrical • Thermal Characteristics
30
1.7 Ta=32°C *1 50Hz Half Sine Wave
3.0 Tc=126°C
Resistive Load
4.71
45
50Hz Half Sine Wave,1cycle,
Non-repetitive
- 40 to + 150
- 40 to + 150
Unit
V
A
A
A
°C
°C
Characteristics
Symbol
Conditions
Peak Reverse Current
Peak Forward Voltage
Thermal
Junction to Ambient
Resistance
Junction to Case
IRM Tj=25°C,VRM=VRRM
VFM Tj=25°C,IFM= 3 A
Rth(j-a) P.C.Board mounted *1
Rth(j-c)
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*1: P.C.Board mounted, Print Land = 20x20 mm
Min Typ Max
- - 3.0
- - 0.45
- - 80
-- 6
Unit
mA
V
°C/W
°C/W
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