EA30QS03L-F Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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SBD Type : EA30QS03L-F
FEATURES
* TO-252AA Case, Surface Mounting Device
* Extremely Low Forward Voltage drop
* Low Power Loss, High Efficiency
* High Surge Capability
* Packaged in 16mm Tape and Reel
OUTLINE DRAWING
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Maximum Ratings
Approx Net Weight:0.30g
Rating
Symbol
EA30QS03L-F
Repetitive Peak Reverse Voltage
Average Rectified
Output Current
RMS Forward Current
VRRM
IO
IF(RMS)
Surge Forward Current
IFSM
Operating JunctionTemperature Range Tjw
Storage Temperature Range
Tstg
Electrical • Thermal Characteristics
30
1.7 Ta=32°C *1 50Hz Half Sine Wave
3.0 Tc=126°C
Resistive Load
4.71
45
50Hz Half Sine Wave,1cycle,
Non-repetitive
- 40 to + 150
- 40 to + 150
Unit
V
A
A
A
°C
°C
Characteristics
Symbol
Conditions
Peak Reverse Current
Peak Forward Voltage
Thermal
Junction to Ambient
Resistance
Junction to Case
IRM Tj=25°C,VRM=VRRM
VFM Tj=25°C,IFM= 3 A
Rth(j-a) P.C.Board mounted *1
Rth(j-c)
-
*1: P.C.Board mounted, Print Land = 20x20 mm
Min Typ Max
- - 3.0
- - 0.45
- - 80
-- 6
Unit
mA
V
°C/W
°C/W
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