EA20QS09 Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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SBD Type : EA20QS09
FEATURES
* TO-251AA Case
* Low Forward Voltage drop
* Low Power Loss
* High Surge Capability
* 40 Volts thru 100 Volts Types Available
OUTLINE DRAWING
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Maximum Ratings
Approx Net Weight:0.35g
Rating
Symbol
EA20QS09
Repetitive Peak Reverse Voltage
Average Rectified
Output Current
P.C.Board
mounted *
-
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
VRRM
IO
IF(RMS)
IFSM
Tjw
Tstg
90
1.7 Ta=32°C
1.7 Tc=139°C
50Hz Half Sine Wave
Resistive Load
2.67
40
50Hz Half Sine Wave,1cycle,
Non-repetitive
- 40 to + 150
- 40 to + 150
Unit
V
A
A
A
°C
°C
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal
Junction to Ambient
Resistance
Junction to Case
* Print Land = 20x20 mm
Symbol
Conditions
IRM Tj=25°C,VRM=VRRM
VFM Tj=25°C,IFM= 2 A
Rth(j-a) P.C.Board mounted *
Rth(j-c)
-
Min Typ Max
- - 1.0
- - 0.85
- - 80
-- 7
Unit
mA
V
°C/W
°C/W
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