EA20QC06 Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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SBD Type : EA20QC06
FEATURES
* TO-251AA Case
* Dual Diodes Cathode Common
* Low Forward Voltage drop
* Low Power Loss
* High Surge Capability
* 40 Volts thru 100 Volts Types Available
OUTLINE DRAWING
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Maximum Ratings
Approx Net Weight:0.35g
Rating
Symbol
Repetitive Peak Reverse Voltage
VRRM
Non-repetitive Peak Reverse Voltage
VRSM
Average Rectified
Output Current
P.C.Board
mounted * IO
1.4
-
2
RMS Forward Current
IF(RMS)
Surge Forward Current
IFSM
20
Operating JunctionTemperature Range
Storage Temperature Range
Tjw
Tstg
EA20QC06
60
65
Ta=28°C
Tc=135°C
50Hz Full Sine Wave
Resistive Load
2.22
50Hz Full Sine Wave,1cycle,
Non-repetitive
- 40 to + 150
- 40 to + 150
Unit
V
V
A
A
A
°C
°C
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal
Junction to Ambient
Resistance
Junction to Case
* Print Land = 20x20 mm
Symbol
Conditions
IRM Tj=25°C,VRM=VRRM per Arm
VFM Tj=25°C,IFM= 1 A per Arm
Rth(j-a) P.C.Board mounted *
Rth(j-c)
-
Min Typ Max
- - 1.0
- - 0.58
- - 80
-- 6
Unit
mA
V
°C/W
°C/W
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