C10T10Q Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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S B D T y p e : C10T10Q
FEATURES
*SQUARE-PAK TO-263AB(SMD)
Packaged in 24mm Tape and Reel
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150 °C operation
OUTLINE DRAWING
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
VRRM
IO
IF(RMS)
IFSM
Tjw
Tstg
Approx Net Weight: 1.4g
C10T10Q
100
10
Tc=121°C
50 Hz Full Sine Wave
Resistive Load
11.1
120
50Hz Full Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
Unit
V
A
A
A
°C
°C
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
IRM
Tj= 25°C, VRM= VRRM
per arm
VFM
Tj= 25°C, IFM= 5 A
Per arm
Rth(j-c) Junction to Case
Min. Typ. Max. Unit
-
-
1 mA
-
- 0.85 V
-
-
3 °C /W
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