C10T06QH-11A Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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S B D T y p e : C10T06QH-11A
FEATURES
*Tabless TO-220
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150 °C operation
OUTLINE DRAWING
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Repetitive Peak Surge Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
VRRM
VRRSM
IO
IF(RMS)
IFSM
Tjw
Tstg
Approx Net Weight: 1.45g
C10T06QH-11A
60
65(pulse width ≤ 1µs duty ≤ 1/50)
10
Tc=125°C
50 Hz Full Sine Wave
Resistive Load
11.1
120
50Hz Full Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
Unit
V
V
A
A
A
°C
°C
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
IRM
Tj= 25°C, VRM= VRRM
per arm
VFM
Tj= 25°C, IFM= 5 A
per arm
Rth(j-c) Junction to Case
Min. Typ. Max. Unit
-
-
1 mA
-
- 0.66 V
-
-
3 °C /W
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