C10T04Q-11A Datasheet, PDF (1/2 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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S B D T y p e : C10T04Q-11A
FEATURES
*Tabless TO-220
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150 °C operation
OUTLINE DRAWING
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
VRRM
VRSM
IO
IF(RMS)
IFSM
Tjw
Tstg
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Approx Net Weight: 1.45g
C10T04Q-11A
40
45
10
Tc=116°C
50 Hz Full Sine Wave
Resistive Load
11.1
120
50Hz Full Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
Unit
V
V
A
A
A
°C
°C
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
IRM
Tj= 25°C, VRM= VRRM
per arm
VFM
Tj= 25°C, IFM= 5 A
per arm
Rth(j-c) Junction to Case
Min. Typ. Max. Unit
-
-
5 mA
-
- 0.55 V
-
-
3 °C /W
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