31DF4 Datasheet, PDF (1/5 Pages) Nihon Inter Electronics Corporation – Ultra - Fast Recovery Diode

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F R D T y p e : 31DF4
FEATURES
* Ultra – Fast Recovery
* Low Forward Voltage Drop
* Low Power Loss, High Efficiency
* High Surge Capability
* 200 Volts thru 600 Volts Types Available
OUTLINE DRAWING
Maximum Ratings
Rating
Symbol
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
VRRM
VRSM
Average Rectified Output Current
IO
RMS Forward Current
IF(RMS)
Surge Forward Current
IFSM
Operating JunctionTemperature Range Tjw
Storage Temperature Range
Tstg
Apporox Net Weight:1.19g
31DF4
Unit
400
V
440
V
1.5 Ta=29°C ∗1
3.0 Ta=25°C ∗2
50Hz Half Sine
Wave Resistive Load
A
4.71
A
60
50Hz Half Sine Wave,1cycle,
Non-repetitive
A
- 40 to + 150
°C
- 40 to + 150
°C
Electrical/Thermal • Characteristics
Characteristics
Symbol
Conditions
Peak Reverse Current
IRM Tj= 25°C, VRM= VRRM
Peak Forward Voltage
VFM Tj= 25°C, IFM= 3 A
Reverse Recovery Time
trr Ta= 25°C, IFM=3 A –di/dt=50A/µs
Thermal Resistance
(Junction to Ambient)
Rth(j-a)
∗1:Without Fin.
∗2:With Fin
∗1: Without Fin or P.C. Board
∗2: With Fin:20x20x1t(mm):Copper plates, L=5mm, Both Sides
Min. Typ. Max.
- - 20
- - 1.25
30
-
-
80
34
Unit
µA
V
ns
°C/W
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