20E4 Datasheet, PDF (1/2 Pages) Nihon Inter Electronics Corporation – Low Forward Voltage drop Diode

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ç_{DIODE Type : 20E4}
FEATURES
ç_{* Miniature Size}
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ç _{* Low Reverse Leakage Current}
ç ^{* High Surge Capability}
* 52mm Inside Tape Spacing Package Available
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OUTLINE DRAWING
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Maximum Ratings
Approx Net Weight:0.38g
Rating
Symbol
20E4
Unit
Repetitive Peak Reverse Voltage
VRRM
400
V
Non-repetitive Peak Reverse Voltage
VRSM
600
V
Average Rectified Output Current
IO
1.3
1.7
Ta=33°C *1
Ta=43°C *2
50Hz Half Sine
Wave Resistive Load
A
RMS Forward Current
IF(RMS)
2.67
A
Surge Forward Current
IFSM
80
50Hz Half Sine Wave,1cycle,
Non-repetitive
A
Operating JunctionTemperature Range Tjw
- 40 to + 150
°C
Storage Temperature Range
Tstg
- 40 to + 150
°C
Electrical • Thermal Characteristics
Characteristics
Symbol
Conditions
Peak Reverse Current
IRM Tj= 25°C, VRM= VRRM
Peak Forward Voltage
VFM Tj= 25°C, IFM= 1.7A
Thermal Resistance
Rth(j-a) Junction to Ambient
*1
*2
*1 : Without Fin or P.C. Board
*2 : P.C. Board Mounted (L=8mm, Print Land=15 x 15mm,Both Sides)
Min. Typ. Max.
- - 10
- - 0.92
-
-
105
70
Unit
µA
V
°C/W
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