11ES4 Datasheet, PDF (1/2 Pages) Nihon Inter Electronics Corporation – Low Forward Voltage Drop Diode

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ç_{DIODE Type : 11ES4}
FEATURES
ç_{* Miniature Size}
çç_*ç_Lçç_oç_wçç_Fç_oç_rwçç_aç_rç_dç_Vçç_oç_ltç_aç_gç_eç_dç_rç_oç_pçççççççççççççççççççççççç
ç _{* Low Reverse Leakage Current}
ç ^{* High Surge Capability}
* 26mm and 52mm Inside Tape Spacing Package
ç _Available
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OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:0.17g
Rating
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
VRRM
VRSM
IO
IF(RMS)
IFSM
Tjw
Tstg
11ES4
400
600
0.98
Ta=25°C *1 50Hz Half Sine
1.0
Ta=50°C *2 Wave Resistive Load
1.57
45
50Hz Half Sine Wave,1cycle,
Non-repetitive
- 40 to + 150
- 40 to + 150
Unit
V
V
A
A
A
°C
°C
Electrical • Thermal Characteristics
Characteristics
Symbol
Conditions
Min. Typ. Max.
Unit
Peak Reverse Current
IRM Tj= 25°C, VRM= VRRM
- - 50
µA
Peak Forward Voltage
VFM Tj= 25°C, IFM= 1.0A
- - 1.0
V
Thermal Resistance
Rth(j-a) Junction to Ambient
*1
*2
- - 140
110
°C/W
*1:Without Fin or P.C. Board
*2:P.C. Board Mounted (L=3mm,Print Land=5x5mm,Both Sides)
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