11EQS09 Datasheet, PDF (1/2 Pages) Nihon Inter Electronics Corporation – Schottky Barrier Diode

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SBD Type :11EQS09
ç ^FEATURES
* Miniature Size
* Low Forward Voltage Drop
* High Surge Capability
* 30volts trough 100volts Types Available
* 26mm and 52mm Inside Tape Spacing Package Available
OUTLINE DRAWING
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Maximum Ratings
Approx Net Weight:0.17g
Rating
Symbol
11EQS09
Repetitive Peak Reverse Voltage
Without Fin or
Average Rectified P.C.Board
Output Current P.C.Board
Mounted *
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
VRRM
IO
IF(RMS)
IFSM
Tjw
Tstg
90
1.0 Ta=30°C _{50Hz Half Sine Wave}
1.0 Ta=55°C ^{Resistive Load}
1.57
40 Half Sine Wave,1cycle,Non-repetitive
- 40 to + 150
- 40 to + 150
Electrical • Thermal Characteristics
Unit
V
A
A
A
°C
°C
Characteristics
Symbol
Conditions
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance(Junction to Ambient)
* :Print Lands = 5x5 mm,Both Sides
IRM Tj= 25°C, VRM= VRRM
VFM Tj= 25°C, IFM= 1 A
Rth(j-a)
Without Fin or P.C.Board
P.C.Board mounted *
Min Typ
--
--
--
Max
0.5
0.85
140
110
Unit
mA
V
°C/W
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