11EQ09 Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Low Forward Voltage drop Diode

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ç_{SBD Type :11EQ09}
FEATURES
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ç _{* Low Power Loss, High Efficiency}
ç ^{* High Surge Capability}
* 40 Volts thru 100 Volts Types Available
ç _{* 26mm&52mm Inside Tape Spacing Package Available}
OUTLINE DRAWING
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Maximum Ratings
Approx Net Weight:0.21g
Rating
Symbol
11EQ09
Unit
Repetitive Peak Reverse Voltage
VRRM
90
V
Average Rectified
Output Current
Without Fin or
P.C.Board
P.C.Board
mounted
1.0
IO
1.0
Ta=30°C*
Ta=60°C*
50Hz Half Sine
Wave Resistive Load
A
RMS Forward Current
IF(RMS)
1.57
A
Surge Forward Current
IFSM
40
50Hz Half Sine Wave,1cycle,
Non-repetitive
A
Operating JunctionTemperature Range Tjw
- 40 to + 150
°C
Storage Temperature Range
Tstg
- 40 to + 150
°C
Electrical • Thermal Characteristics
Characteristics
Symbol
Conditions
Min. Typ. Max.
Peak Reverse Current
IRM Tj= 25°C, VRM= VRRM
-
Peak Forward Voltage
VFM Tj= 25°C, IFM= 1.0A
-
Thermal Resistance (Junction to Ambient)
Rth(j-a)
Without Fin or P.C.Board
P.C.Board mounted
-
*:Print Lands=5x5mm,Both Sides
- 0.5
- 0.85
-
140
105
Unit
mA
V
°C/W
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