11EFS4 Datasheet, PDF (1/5 Pages) Nihon Inter Electronics Corporation – Low Forward Voltage drop Diode

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FRD Type : 11EFS4
ç^FEATURES
* Miniature Size
* Ultra-Fast Recovery
* Low Forward Voltage Drop
* Low Power Loss, High Efficiency
* High Surge Capability
* 200 Volts through 400 Volts Types Available
* 26mm and 52mm Inside Tape Spacing
OUTLINE DRAWING
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Maximum Ratings
Approx Net Weight:0.17g
Rating
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Symbol
VRRM
VRSM
Average Rectified
Output Current
IO
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature
Range
Storage Temperature Range
IF(RMS)
IFSM
Tjw
Tstg
11EFS4
Unit
400
V
440
V
0.8 Ta=30°C Without Fin ∗1 _{50Hz Half Sine}
1 Ta=24°C P.C.B.Mounted∗2 ^{WaveResistive Load}
A
1.57
A
30 50Hz Half Sine Wave,1cycle,Non-repetitive
A
- 40 to + 150
°C
- 40 to + 150
°C
Electrical • Thermal Characteristics
Characteristics
Symbol
Conditions
Peak Reverse Current IRM Tj= 25°C, VRM= VRRM
Peak Forward Voltage VFM Tj= 25°C, IFM= 1 A
Reverse Recovery
Time
trr IFM= 1 A, -di/dt= 50 A/µs, Ta= 25°C
Thermal Resistance
Rth(j-a)
Junction
to
Ambient
Without Fin,PCB
P.C.Board Mounted
∗1
∗2
∗1 Without Fin or P.C.Board
Min Typ
--
--
--
--
Max
20
1.25
30
140
110
Unit
µA
V
ns
°C/W
∗2 P.C. Board Mounted(L=3mm, Print Lands = 5x5 mm,Both Sides)
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