11DQ10 Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Low Forward Voltage drop Diode

ç
ç_{SBD Type :11DQ10}
O_FU_ETL_AI_TN_UE_RD_ER_SAWINGççççççççççççççççççççççççççç
ç
* Miniature Size
ç _{* Low Forward Voltage drop}
ç _{* Low Power Loss, High Efficiency}
ç
*
*
High Surge Capability
30 Volts thru 100 Volts
Types
Available
ç _{* 52mm Inside Tape Spacing Package Available}
OUTLINE DRAWING
ç
Maximum Ratings
Approx Net Weight:0.32g
Rating
Symbol
11DQ10
Unit
Repetitive Peak Reverse Voltage
VRRM
100
V
Average Rectified
Output Current
Without Fin or
P.C.Board
P.C.Board
mounted
1.0
IO
1.0
Ta=35°C*
Ta=78°C*
50Hz Half Sine
Wave Resistive Load
A
RMS Forward Current
IF(RMS)
1.57
A
Surge Forward Current
IFSM
40
50Hz Half Sine Wave,1cycle,
Non-repetitive
A
Operating JunctionTemperature Range Tjw
- 40 to + 150
°C
Storage Temperature Range
Tstg
- 40 to + 150
°C
Electrical • Thermal Characteristics
Characteristics
Symbol
Conditions
Min. Typ. Max.
Peak Reverse Current
IRM Tj= 25°C, VRM= VRRM
-
Peak Forward Voltage
VFM Tj= 25°C, IFM= 1.0A
-
Thermal Resistance (Junction to Ambient)
Rth(j-a)
Without Fin or P.C.Board
P.C.Board mounted
-
- 0.5
- 0.85
-
130
81
*:Print Lands=5x5mm,Both Sides
Unit
mA
V
°C/W
ç