10EDB10 Datasheet, PDF (1/5 Pages) Nihon Inter Electronics Corporation – DIODE - 1A 100V TJ = 150C

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ç_{DIODE Type : 10EDB10}
1A 100V Tj =150 °C
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ç _{* Miniature Size}
ç ^{* Low Forward Voltage drop}
* Low Reverse Leakage Current
ç _{* High Surge Capability}
ç ^{* 26mm and 52mm Inside Tape Spacing Package}
Available
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:0.17g
Rating
Symbol
10EDB10
Repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
VRRM
IO
50Hz
Half Sine Wave
Resistive Load
100
Ta=39°C *1
Ta=26°C *2
IF(RMS)
IFSM
50Hz Half Sine Wave,1cycle,
Non-repetitive
Tjw
- 40 to + 150
Tstg
- 40 to + 150
1.0
0.9
1.57
45
Unit
V
A
A
A
°C
°C
Electrical • Thermal Characteristics
Characteristics
Symbol
Conditions
Min.
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
IRM Tj= 25°C, VRM= VRRM
-
VFM Tj= 25°C, IFM= 1.0A
-
Rth(j-a)
Junction to P.C. Board mounted*1
Ambient Without Fin *2
-
-
*1: P.C. Board mounted (L=3mm, Print Land=5 x 5mm, Both Sides)
*2: Without Fin or P.C. Board mounted
Typ.
-
-
-
-
Max.
10
1.0
110
140
Unit
µA
V
°C/W
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