10DDA60 Datasheet, PDF (1/5 Pages) Nihon Inter Electronics Corporation – DIODE - 1A 600V TJ = 150C

1A 600Vç T_jw150ˆ
ܕࢄ֦γϦίϯμΠΦʔυ
Diffusion-type Silicon Rectifier Diode
10DDA60ç
çççççççççççççççç
Axialç Leadç Type
֎ç ܗç ਤ
ߏ଄
Construction
༻్
Application
ܕࢄ֦γϦίϯμΠΦʔυ,Ϧʔυઢܕ
Diffusion-type Silicon Rectifier Diode
Ұൠ੔ྲྀ༻
For General Use
˙ ࠷େఆ֨ç MAXIMUM RATINGS
Item
͘Γฦ͠ϐʔΫిٯѹ
Repetitive peak reverse voltage
ฏۉ੔ྲྀిྲྀ
Average rectified forward current
࣮ޮॱిྲྀ
R.M.S. forward current
αʔδॱిྲྀ
Surge forward current
ಈ࡞઀߹Թ౓ൣғ
Operating junction temperature range
อଘԹ౓ൣғ
Storage temperature range
Symbol
VRRM
IO
IF(RMS)
IFSM
Tjw
Condition
50Hz 正弦半波
50Hz half sine wave
抵抗負荷
Resistance load
Ta = 58℃ *1
Tl = 132℃
（Tl:Lead Temperature）
50Hz 正弦半波 1 サイクル 非くり返し
50Hz half sine wave 1cycle, non-repetitive
Tstg
࣭ྔɿ0.32 ̶
Max. Rated value
Unit
600
V
1.0
A
1.0
1.57
A
45
A
ʵ40ʙ+150
ˆ
ʵ40ʙ+150
ˆ
ؾి ˙తɾ೤తಛੑç ELECTRICAL / THERMAL CHARACTERISTICS
Item
Symbol
Condition
Min. Typ. Max.
ϐʔΫྲྀిٯ
Peak reverse current
IRM
VRM=VRRM Tj=25ˆ
ʵ ʵ 10
ϐʔΫॱిѹ
Peak forward voltage
VFM
IFM=1A
Tj=25ˆ
ʵ ʵ 1.0
೤఍߅
Thermal resistance
Rth(j-a)
઀߹෦ɾपғؒ
Junction to Ambient
*1(୯ମϑΟϯແ͠)
ʵ
ʵ
91
Rth(j-l)
઀߹෦ɾϦʔυؒ
Junction to Lead
ʵ ʵ 17
ç ñøɿ୯ମϑΟϯແ͠çʗçĞİĻįĶļĻçčİĵçĶĹçėõĊõçĉĶĨĹīçĴĶļĵĻĬīç
Unit
ЖA
V
ˆ/W