PRHMB600E6_15 Datasheet, PDF (4/4 Pages) National Instruments Corporation – IGBT

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Fig.13- Forward Characteristics of Free Wheeling Diode
1200
TC=25°C
(Typical)
TC=125°C
1000
800
600
400
200
0
0
1
2
3
4
Forward Voltage VF (V)
Fig.14- Reverse Recovery Characteristics (Typical)
1000
500
trr
IF=600A
TC=25°C
TC=125°C
200
100
IRrM
50
20
0
600
1200
1800
2400
3000
3600
-di/dt (A/µs)
5000
2000
1000
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
Fig.15- Reverse Bias Safe Operating Area
RG=2.0(, VGE=±15V, TC<125°C
200
400
600
800
Collector to Emitter Voltage V CE (V)
1
3x10^-1
1x10^-1
3x10^-2
1x10^-2
3x10^-3
1x10^-3
3x10^-4
10^-5
Fig.16- Transient Thermal Impedance
FRD
IGBT
TC=25°C
1 Shot Pulse
10^-4
10^-3
10^-2
10^-1
1
10¹
Time t (s)
00
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