PRFMB300E6_15 Datasheet, PDF (4/4 Pages) National Instruments Corporation – IGBT

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Fig.13- Forward Characteristics of Free Wheeling Diode
(Typical)
600
TC=25°C
TC=125°C
500
400
300
200
100
0
0
1
2
3
4
Forward Voltage VF (V)
Fig.14- Reverse Recovery Characteristics (Typical)
1000
500
IF=300A
TC=25°C
TC=125°C
trr
200
100
50
IRrM
20
10
0
300
600
900
1200
1500
1800
-di/dt (A/µs)
2000
1000
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
Fig.15- Reverse Bias Safe Operating Area
RG=4.7(, VGE=±15V, TC<125°C
200
400
600
800
Collector to Emitter Voltage V CE (V)
1
3x10^-1
1x10^-1
3x10^-2
1x10^-2
3x10^-3
1x10^-3
10^-5
Fig.16- Transient Thermal Impedance
FRD
IGBT
TC=25°C
1 Shot Pulse
10^-4
10^-3
10^-2
10^-1
1
10¹
Time t (s)
00
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