PRHMB75B12A_15 Datasheet, PDF (3/3 Pages) National Instruments Corporation – IGBT

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Fig.7- Series Gate Impedance vs. Switching Time (Typical)
10
VCC=600V
5 ^IC=75A
VGE=±15V
TC=25℃
toff
2
ton
1
tr
0.5
tf
0.2
0.1
0.05
0.02
5
10
20
50
100
200
Series Gate Impedance RG (Ω)
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
150
TC=25℃
TC=125℃
125
100
75
50
25
0
0
1
2
3
4
Forward Voltage VF (V)
Fig.9- Reverse Recovery Characteristics (Typical)
500
IF= 7 5 A
TC= 2 5 ℃
200
trr
100
50
20
10
5
IRrM
2
1
0
150
300
450
-di/dt (A/μs)
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
Fig.10- Reverse Bias Safe Operating Area
RG=13Ω
VGE=±15V
TC≦125℃
400
800
1200
1600
Collector to Emitter Voltage V CE (V)
fig11-Tansient Thermal Impedance
5
2
1
5x10^-1
-1
2x10
-1
1x10
5x10^-2
FRD
IGBT
-2
2x10
-2
1x10
-3
5x10
Tc=25℃
1 Shot Pulse
-3
2x10 _-5
-4
-3
-2
-1
10
10
10
10
10
1
10 ¹
Time t （s）
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