PRHMB200B12_15 Datasheet, PDF (3/3 Pages) National Instruments Corporation – IGBT

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Fig.7- Series Gate Impedance vs. Switching Time (Typical)
10
VCC= 6 0 0 V
IC=200A
5 _VGE=±15V
TC= 2 5 ℃
2
toff
tr
ton
1
0.5
tf
0.2
0.1
0.05
1
2
5
10
20
50
100
200
Series Gate Impedance RG (Ω)
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
400
TC=25℃
TC= 1 2 5 ℃
300
200
100
0
0
1
2
3
4
Forward Voltage VF (V)
Fig.9- Reverse Recovery Characteristics (Typical)
1000
IF=200A
TC=25℃
500
200
trr
100
50
20
IRrM
10
5
0
200
400
600
800
-di/dt (A/μs)
1000
1200
1000
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
Fig.10- Reverse Bias Safe Operating Area (Typical)
R G= 2 Ω
VGE = ± 1 5 V
TC≦ 1 2 5 ℃
400
800
1200
1600
Collector to Emitter Voltage V CE (V)
1
5x10 ^-1
2x10 ^-1
1x10 ^-1
5x10 ^-2
2x10 ^-2
1x10 ^-2
5x10 ^-3
2x10 ^-3
1x10 ^-3
5x10 ^-4
10 ^-5
Fig.11- Transient Thermal Impedance
FRD
IGBT
TC=25℃
1 Shot Pulse
10 ^-4
10 ^-3
10 ^-2
10 ^-1
1
10 ¹
Time t (s)
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