PHMB800BS12_15 Datasheet, PDF (3/4 Pages) National Instruments Corporation – IGBT

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Fig.7- Collector Current vs. Switching Time (Typical)
2
VCC=600V
RG=2.0A
VGE=±15V
1.6
TC=25°C
Resistive Load
tOFF
1.2
0.8 _tf
0.4
0
0
200
400
600
Collector Current IC (A)
tON
tr(V_CE)
800
Fig.9- Collector Current vs. Switching Time
10
3
tOFF
1
tf
tON
0.3
VCC=600V
RG=2.0A
VGE=±15V
TC=125°C
Inductive Load
tr(Ic)
0.1
0.03
0.01
0
200
400
600
800
Collector Current IC (A)
1000
Fig.11- Collector Current vs. Switching Loss
250
VCC=600V
RG=2.0A
VGE=±15V
200 TC=125°C
Inductive Load
EON
150
EOFF
100
ERR
50
0
0
200
400
600
800
1000
1200
Collector Current IC (A)
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
5
VCC=600V
3 ^IC=800A
VGE=±15V
TC=25°C
Resistive Load
1
toff
ton
tf
0.3
0.1
tr(V_CE)
0.03
1
3
10
30
Series Gate Impedance RG (A )
Fig.10- Series Gate Impedance vs. Switching Time
10
VCC=600V
5 ^IC=800A
VGE=±15V
TC=125°C
2 ^{Inductive Load}
1 toff
0.5 ^ton
0.2 ^tf
0.1
0.05
tr(I_C)
0.02
1
3
10
30
Series Gate Impedance RG (A )
Fig.12- Series Gate Impedance vs. Switching Loss
3000
1000
VCC=600V
IC=800A
VGE=±15V
TC=125°C
Inductive Load
EON
300
EOFF
100
ERR
30
10
1
3
10
30
Series Gate Impedance RG (A )
00
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