PDMB800E6_15 Datasheet, PDF (3/4 Pages) National Instruments Corporation – IGBT

ＰＤＭＢ8００Ｅ６
QS043-402-20396（4/5）
Fig.7- Collector Current vs. Switching Time (Typical)
1
0.8 tOFF
VCC=300V
RG=1.5(
VGE=±15V
TC=25°C
Resistive Load
0.6
tf
0.4
0.2 ^tON
tr(V_CE)
0
0
200
400
600
800
Collector Current IC (A)
1000
1200
Fig.9- Collector Current vs. Switching Time
10
1
tOFF
VCC=300V
RG=1.5(
VGE=±15V
TC=125°C
Inductive Load
tON
0.1
tf
tr(Ic)
0.01
0.001
0
200
400
600
800
1000
1200
Collector Current IC (A)
Fig.11- Collector Current vs. Switching Loss
80
VCC=300V
RG=1.5(
VGE=±15V
TC=125°C
60 Inductive Load
EOFF
EON
40
ERR
20
0
0
200
400
600
800
1000
1200
Collector Current IC (A)
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
10
VCC=300V
5 ^IC=800A
VGE=±15V
TC=25°C
2 ^{Resistive Load}
1
0.5 _toff
0.2 ^ton
0.1
0.05
tr(V_CE)
tf
0.02
1
1.5
3
10
30
Series Gate Impedance RG (()
Fig.10- Series Gate Impedance vs. Switching Time
10
VCC=300V
5 ^IC=800A
VGE=±15V
TC=125°C
2 ^{Inductive Load}
1
0.5 ^toff
tr(I_C)
ton
0.2
tf
0.1
0.05
0.02
1
1.5
3
10
30
Series Gate Impedance RG (()
Fig.12- Series Gate Impedance vs. Switching Loss
3000
1000
300
VCC=300V
IC=800A
VGE=±15V
TC=125°C
Inductive Load
EON
100
EOFF
30
ERR
10
3
1
1
1.5
3
10
30
Series Gate Impedance RG (()
00
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