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| PDM505HA_15 Datasheet, PDF (3/3 Pages) National Instruments Corporation – MOSFET | |||
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Ëà°Ö¨É¾à²à©Ûઢ
'JH5ZQJDBM0VUQVU$IBSBDUFSJTUJDT
80
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7(4 7
7
60
7
40
20
7
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'JH7T(BUF4PVSDF7PMUBHF
8
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6
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16
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*% "
12
8
"
4
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0
0
2
4
6
8
10
12
DRAIN TO SOURCE VOLTAGE VDS (V)
'JH5ZQJDBM$BQBDJUBODF
'JH7T%SBJO4PVSDF7PMUBHF
12
7(4 7G .)[
10
$JTT
8
6
0
0
4
8
12
16
GATE TO SOURCE VOLTAGE VGS (V)
'JH5ZQJDBM(BUF$IBSHF
'JH7T(BUF4PVSDF7PMUBHF
16
7%% 7
7
7
*% "
12
8
0
-40
0
40
80
120
160
JUNCTION TEMPERATURE Tj (ɹË)
'JH5ZQJDBM4XJUDIJOH5JNF
'JH7T4FSJFT(BUFJNQFEBODF
5
*% "7%% 75$ ËÐT1VMTF5FTU
UE PGG
2
US
1
UE PO
UG
0.5
4
0.2
4
2
$PTT
0.1
0
1
2
5
10 20
50 100
DRAIN TO SOURCE VOLTAGE VDS (V)
'JH5ZQJDBM4XJUDIJOH5JNF
'JH7T%SBJO$VSSFOU
1000
3( Ð7%% 75$ ËÐT1VMTF5FTU
0
0
100 200 300 400 500 600
TOTAL GATE CHRAGE Qg (nC)
'JH5ZQJDBM4PVSDF%SBJO%JPEF'PSXBSE
'JH$IBSBDUFSJTUJDT
120
ÐT1VMTF5FTU
0.05
2
5
10 20
50 100 200
SERIES GATE IMPEDANCE RG (Ðɹ )
'JH5ZQJDBM3FWFSTF3FDPWFSZ$IBSBDUFSJTUJDT
500
*4 "ɹ*4 "5K Ë
500
100
200
UE PGG
80
100
US
UE PO
60
UG
50
40
20
20
5K Ë
200
USS
100
50
5K Ë
20
*3
10
10
1
2
5
10
20
DRAIN CURRENT ID (A)
'JH.BYJNVN4BGF0QFSBUJOH"SFB
50 100
200
5$ Ë5K Ë."94JOHMF1VMTF
ÐT
100
50
20
10
0QFSBUJPOJOUIJTBSFB
5
JTMJNJUFECZ3%4 PO
ÐT
NT
NT
2
1
%$
0.5
0.2
12
5 10 20 50 100 200 5001000
DRAIN TO SOURCE VOLTAGE VDS (V)
0
0
0.3 0.6 0.9 1.2 1.5 1.8
SOURCE TO DRAIN VOLTAGE VSD (V)
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/PSNBMJ[FE5SBOTJFOU5IFSNBM
JNQFEBODF .04'&5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
10
-5
'JH
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JNQFEBODF %*0%&
2
1
0.5
0.2
0.1
0.05
0.02
0.01
10
-5
á´· á´·
5
0
100 200 300 400 500 600
-dis/dt (A/Ðs)
1FS6OJU#BTF
3UI KD
Ë8
4IPU1VMTF
10-4
10-3
10-2
10-1
1
10
PULSE DURATION t (s)
1FS6OJU#BTF
3UI KD
Ë8
4IPU1VMTF
10-4
10-3
10-2
10-1
1
10
PULSE DURATION t (s)
|
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