PRHMB50B12_15 Datasheet, PDF (2/3 Pages) National Instruments Corporation – IGBT

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Fig.1- Output Characteristics (Typical)
TC=25℃
100
VGE = 2 0 V
12V
10V
15V
75
9V
50
8V
25
7V
0
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC= 1 2 5 ℃
16
IC= 2 5 A
100A
14
50A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
20000
10000
5000
VGE=0V
f=1MHZ
TC=25℃
Cies
2000
1000
Coes
500
200
Cres
100
50
20
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16
TC= 2 5 ℃
IC= 2 5 A
100A
14
50A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800
16
RL=12Ω
TC=25℃
700
14
600
12
500
10
400
8
VCE=600V
300
6
400V
200
4
200V
100
2
0
0
0
50
100
150
200
250
300
350
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1.4
1.2
tOFF
1
VCC=600V
RG=20Ω
VGE=±15V
TC=25℃
0.8
0.6 tf
0.4
tON
0.2
tr
0
0
10
20
30
40
50
Collector Current IC (A)
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