PRHMB200B12A_15 Datasheet, PDF (2/3 Pages) National Instruments Corporation – IGBT

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Fig.1- Output Characteristics (Typical)
400
VGE=20V
12V
TC=25℃
10V
15V
300
9V
200
100
0
0
16
14
12
10
8
6
4
2
0
0
8V
7V
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC= 1 2 5 ℃
IC= 1 0 0 A
400A
200A
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
100000
50000
VGE=0V
f= 1 MHZ
TC= 2 5 ℃
20000
Cies
10000
5000
2000
Coes
1000
500
Cres
200
100
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC= 2 5 ℃
16
IC= 1 0 0 A
400A
14
200A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800
16
RL=3Ω
TC=25℃
700
14
600
12
500
10
400
8
VCE=600V
300
6
400V
200
4
200V
100
2
0
0
0
300
600
900
1200
1500
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1.4
1.2
1
tOFF
VCC=600V
RG= 2.0 Ω
VGE = ± 1 5 V
TC= 2 5 ℃
0.8
tf
0.6
0.4
0.2
tON
tr
0
0
50
100
150
200
Collector Current IC (A)
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