PRHMB150B12_15 Datasheet, PDF (2/3 Pages) National Instruments Corporation – IGBT

ＰＲＨＭＢ１５０Ｂ１２
Fig.1- Output Characteristics (Typical)
300
VGE = 2 0 V
12V
TC= 2 5 ℃
10V
250
15V
200
9V
150
100
50
0
0
16
14
12
10
8
6
4
2
0
0
8V
2
4
6
8
Collector to Emitter Voltage VCE (V)
7V
10
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC= 1 2 5 ℃
IC= 7 5 A
300A
150A
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
50000
20000
10000
VGE = 0 V
f=1MHZ
Cies ^TC=25℃
5000
2000
1000
500
200
100
50
0.1 0.2
Co e s
Cres
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25℃
16
IC= 7 5 A
300A
14
150A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800
16
RL=4Ω
TC=25℃
700
14
600
12
500
10
400
8
VCE=600V
300
6
400V
200
4
200V
100
2
0
0
0
150 300 450 600 750 900 1050 1200
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1.4
1.2
1 _tOFF
VCC=600V
RG= 3.0 Ω
VGE = ± 1 5 V
TC= 2 5 ℃
0.8
tf
0.6
0.4
0.2
tON
tr
0
0
25
50
75
100
125
150
Collector Current IC (A)
日本インター株式会社