PRFMB200E6_15 Datasheet, PDF (2/4 Pages) National Instruments Corporation – IGBT

ＰＲＦＭＢ２００Ｅ６
400
350
300
250
200
150
100
50
0
0
Fig.1- Output Characteristics (Typical)
TC=25°C
VGE=20V
12V
15V
11V
10V
1
2
3
4
Collector to Emitter Voltage VCE (V)
9V
8V
5
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25°C
16
IC=100A
400A
14
200A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
400
350
300
250
200
150
100
50
0
0
16
14
12
10
8
6
4
2
0
0
Fig.2- Output Characteristics (Typical)
TC=125°C
VGE=20V
12V
15V
11V
10V
9V
8V
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125°C
IC=100A
200A
400A
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
16
RL=1.5(
TC=25°C
350
14
300
12
250
10
VCE=300V
200
8
150
200V
6
100V
100
4
50
2
0
0
0
200
400
600
800
Total Gate Charge Qg (nC)
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
100000
30000
VGE=0V
f=1MHZ
TC=25°C
10000
Cies
3000
1000
Coes
Cres
300
100
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
00
日本インター株式会社